Fernando Corinto received the Masters’ Degree in Electronic Engineering and the Ph.D. degree in Electronics and Communications Engineering from the Politecnico di Torino, in 2001 and 2005 respectively. He also received the European Doctorate from the Politecnico di Torino, in 2005. Prof. Corinto was awarded a Marie Curie Fellowship in 2004.
He is currently Associate Professor of Circuit Theory with the Department of Electronics and Telecommunications, Politecnico di Torino. His research activities are mainly on nonlinear circuits and systems, locally coupled nonlinear/nanoscale networks and memristor nanotechnology.
Prof. Corinto is co-author of 6 book chapters and more than 130 international journal and conference papers. Since 2010, he is Senior Member of the IEEE. He is also Member of the IEEE CAS Technical Committees on “Cellular Nanoscale Networks and Array Computing” and “Nonlinear Circuits and Systems”. Prof. Corinto serves as Vice-Chair of the IEEE North Italy CAS Chapter. Prof. Corinto has been Associated Editor of the IEEE Trans. on Circuits and Systems – I for 2014-2015. He is also in the Editorial Board and Review Editor of the International Journal of Circuit Theory and Applications since January 2015. Prof. Corinto is Vice Chair of the COST Action “Memristors – Devices, Models, Circuits, Systems and Applications (MemoCiS)”. Prof. Corinto has been DRESDEN Senior Fellows at the Technische Universität Dresden in 2013 and 2017. Prof. Corinto is also August-Wilhelm Scheer visiting professor at Technische Universität München and member of the Institute for Advanced Study -Technische Universität München.
Complex Dynamics in Adaptive Networks with Memristors
Nonlinear dynamic behavior of memristors is exploited in oscillatory and chaotic circuits. A thorough study is necessary to understand the rich complex nonlinear phenomena emerging in memristor circuits.
The aim of the talk is to present a novel systematic methodology for the analysis of a large class of nonlinear circuits containing memristors. The class is constituted by ideal capacitors, ideal inductors, ideal resistors, ideal independent voltage and current sources, and memristors that are either flux–controlled and/or charge–controlled. The main advantage of the proposed method is that it enables to describe adaptive memristor–based circuits by means of a reduced number of Ordinary Differential Equations compared to current approaches available in literature. This permits to simplify the investigation of nonlinear dynamic behavior and bifurcations without parameters in memristor circuits and to make clear the influence of initial conditions.